首页> 外国专利> TECHNIQUES OF RECOVERING DATA FROM MEMORY CELL AFFECTED BY FIELD COUPLING WITH ADJACENT MEMORY CELL

TECHNIQUES OF RECOVERING DATA FROM MEMORY CELL AFFECTED BY FIELD COUPLING WITH ADJACENT MEMORY CELL

机译:现场耦合邻近记忆细胞影响的记忆细胞数据恢复技术

摘要

PROBLEM TO BE SOLVED: To overcome degradation of the apparent charge levels stored in one row of memory cells as a result of subsequently programming an adjacent row of memory cells.;SOLUTION: After data of subsequently programmed is stored, the charge levels of the cells are driven to a common level. The charge levels of the first row of the cells have a uniform influence from the charge levels of the second row, and consequently, the chance of successfully reading the data stored in the first row is significantly increased.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:为了克服由于随后对相邻一行存储单元进行编程而导致存储在一行存储单元中的表观电荷水平降低的问题;解决方案:在存储了随后编程的数据之后,存储单元的电荷水平被驱动到一个共同的水平。单元格的第一行的电荷水平受到第二行的电荷水平的一致影响,因此,成功读取存储在第一行中的数据的机会大大增加。;版权:(C)2003,日本特许厅

著录项

  • 公开/公告号JP2003249085A

    专利类型

  • 公开/公告日2003-09-05

    原文格式PDF

  • 申请/专利权人 SANDISK CORP;

    申请/专利号JP20030011503

  • 发明设计人 CHEN JIAN;PHAM LONG C;MAK ALEXANDER K;

    申请日2003-01-20

  • 分类号G11C16/02;G11C16/04;G11C16/06;G11C29/00;

  • 国家 JP

  • 入库时间 2022-08-22 00:15:42

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