METHOD FOR REDUCING DEFECT DENSITY AND METHOD FOR CONTROLLING FLOW RATE OF SLURRY IN CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR WAFER

摘要

PROBLEM TO BE SOLVED: To provide a flow rate of slurry optimal for achieving a best polishing result in CPM of a semiconductor wafer when other parameters are set identically. ;SOLUTION: A method for controlling the flow rate of slurry and reducing defect density in the chemical mechanical polishing system (100) of a semiconductor wafer is provided. After the cost of slurry required for single time polishing is calculated, the flow rate of slurry being used for polishing is maximized within such a limit as the economical profit per wafer attainable through increase of yield in the production of semiconductor wafer, achieved by increasing the flow rate of slurry being used for polishing thereby reducing defects on the polished surface, is higher than the cost of slurry required for single time polishing.;COPYRIGHT: (C)2003,JPO