SUBSTRATE FOR DIAMOND THIN FILM AND METHOD FOR MANUFACTURING DIAMOND FILM

摘要

PROBLEM TO BE SOLVED: To manufacture a substrate for a diamond thin film using a silicon substrate and to manufacture the diamond thin film having a large surface area.;SOLUTION: In the substrate for the diamond thin film, a Pt thin film is deposited on the silicon substrate through an intermediate layer consisting of a lower layer of an amorphous SiO_x or SiN_x or a composite of these compounds and an upper layer of TiO₂. It is preferable that the silicon substrate having the deposited intermediate layer and the deposited Pt thin film is kept at a temperature of 600 to 1,000°C under a mixed gas atmosphere of Ar-O₂ for a long time. The silicon substrate on which the Pt thin film is formed is subjected to supersonic treatment or rubbed with a diamond paste. Thereby a number of diamond nuclei effective for growing the diamond thin film are formed. The diamond thin film is manufactured by covering the side face of the substrate for the diamond thin film with Pt, and synthesizing diamond particles in a vapor phase by a CVD method in such a state that the substrate for the diamond thin film is brought into contact with an electroconductive silicon substrate.;COPYRIGHT: (C)2003,JPO