首页> 外国专利> METHOD FOR MANUFACTURING CRYSTALLINE SILICON THIN FILM AND SOLAR CELL UTILIZING CRYSTALLINE SILICON THIN FILM

METHOD FOR MANUFACTURING CRYSTALLINE SILICON THIN FILM AND SOLAR CELL UTILIZING CRYSTALLINE SILICON THIN FILM

机译:晶体硅薄膜的制造方法及太阳能电池

摘要

PPROBLEM TO BE SOLVED: To provide a technology capable of forming a silicon thin film having good crystallinity even when scanning rate is raised in the formation of the silicon thin film using a zone melting recrystallization process, and to provide a solar cell using the formed silicon thin film. PSOLUTION: This method for manufacturing a crystalline silicon thin film comprises recrystallizing a polycrystalline silicon layer with smooth surface by the zone melting recrystallization process, after forming a heat-resistant layer for peeling such as a silicon oxide layer, silicon nitride layer, etc., and a polycrystalline silicon layer with smooth surface on a heat-resistant substrate; or after forming a heat-resistant layer for peeling such as a silicon oxide layer, silicon nitride layer, etc., and a polycrystalline silicon layer on the heat-resistant substrate, and smoothing the surface of the polycrystalline silicon layer; or after forming a heat-resistant layer for peeling such as a silicon oxide layer, silicon nitride layer, etc., and a thin amorphous silicon layer on the heat-resistant substrate. PCOPYRIGHT: (C)2003,JPO
机译:

要解决的问题:提供一种即使在使用区域熔融再结晶法形成硅薄膜时提高扫描速度时也能够形成具有良好结晶性的硅薄膜的技术,以及提供一种使用形成的硅薄膜。

解决方案:此制造晶体硅薄膜的方法包括:在形成用于剥离的耐热层(例如氧化硅层,氮化硅层)之后,通过区域熔化再结晶工艺对表面光滑的多晶硅层进行再结晶。在耐热基板上具有表面光滑的多晶硅层等。或者在所述耐热基板上形成诸如氧化硅层,氮化硅层等的用于剥离的耐热层和多晶硅层之后,使所述多晶硅层的表面光滑。或者在耐热基板上形成诸如氧化硅层,氮化硅层等的用于剥离的耐热层以及薄的非晶硅层之后。

版权:(C)2003,日本特许厅

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