MAGNETIC STORAGE ELEMENT, MAGNETIC MEMORY, MAGNETIC RECORDING METHOD, MANUFACTURING METHOD FOR MAGNETIC STORAGE ELEMENT AND MANUFACTURING METHOD FOR MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a new magnetic storage element capable of providing a practical MRAM together with a magnetic memory using it. SOLUTION: A magnetic storage element 10 comprises a first magnetic thin film 1 wherein application of an external magnetic field generates a spin vortex, and a second magnetic thin film 2 comprising magnetization C almost vertical relative to a film surface above the first magnetic thin film 1. Between the first magnetic thin film 1 and the second magnetic thin film 2, an insulating layer 3 is formed to control (suppress) a current flowing the entire magnetic storage element 10. By applying a prescribed external magnetic field to the magnetic storage element 10, the spin vortex is generated in the first magnetic thin film 1, so that information is recorded according to the magnetizing direction which rises vertically at a nucleu part.