METHOD OF EPITAXIALLY GROWING COMPOUND SEMICONDUCTOR LAYER AND GROWTH DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of growing a compound semiconductor layer having a uniform composition and a uniform thickness to an epitaxial film by heating a substrate at a uniform temperature, and to provide a growth device. ;SOLUTION: A tray of the growth device is constituted of a circular plate with the unrelieved upper and lower surfaces, and a ring member for holding the circular plate and the upper and lower surfaces of the circular plate in contact with a substrate and a susceptor, are polished to raise the flatness of the circular plate. Consequently, an irregularity in the gaps between the substrate and the susceptor and the tray can be suppressed and it becomes possible to heat the substrate at a uniform temperature with good reproducibility.;COPYRIGHT: (C)2003,JPO