首页> 外国专利> APPLICATION LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM USING THE SAME, AND METHOD FOR FORMING METAL OXIDE PATTERN

APPLICATION LIQUID FOR FORMING METAL OXIDE FILM, METAL OXIDE FILM USING THE SAME, AND METHOD FOR FORMING METAL OXIDE PATTERN

机译:用于形成金属氧化物膜的应用液体,使用其的金属氧化物膜以及用于形成金属氧化物图案的方法

摘要

PROBLEM TO BE SOLVED: To provide an application liquid for forming metal oxide film which is capable of forming a metal oxide film or a metal oxide pattern which is large in thickness and is free from a crack by the MOD method, and a method for forming the metal oxide film and the metal oxide pattern using the application liquid.;SOLUTION: This application liquid contains a heat-decomposable organic metal A, a solvent B, an organic compound C completing the heat decomposition at a temperature higher than the heat decomposition temperature of the organic metal A and/or an organic compound D which comes to an organic compound Cx completing the heat decomposition at a temperature higher than the heat decomposition temperature of the organic metal A in a film forming process. Further, on the heat decomposition of the organic metal A, the organic compound C and/or the organic compound Cx is allowed to exist and, thereby, the generation of crack is suppressed and prevented.;COPYRIGHT: (C)2003,JPO
机译:解决的问题:提供一种用于形成金属氧化物膜的涂布液,该涂布液能够通过MOD方法形成厚度大且无裂纹的金属氧化物膜或金属氧化物图案以及形成方法。解决方案:该涂布液包含可热分解的有机金属A,溶剂B和有机化合物C,它们在高于热分解温度的温度下完成热分解在成膜过程中,在高于有机金属A的热分解温度的温度下完成有机分解的有机金属A和/或有机化合物D的有机化合物D。此外,在有机金属A的热分解中,允许存在有机化合物C和/或有机化合物Cx,从而抑制和防止了裂纹的产生。;版权所有:(C)2003,JPO

著录项

  • 公开/公告号JP2003096572A

    专利类型

  • 公开/公告日2003-04-03

    原文格式PDF

  • 申请/专利权人 MURATA MFG CO LTD;

    申请/专利号JP20010288880

  • 发明设计人 SAKATA TOMONORI;

    申请日2001-09-21

  • 分类号C23C18/02;C01G9/02;C01G55/00;H05K1/09;H05K3/06;

  • 国家 JP

  • 入库时间 2022-08-22 00:12:53

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