Method for forming a tioss(2-x) film on a material surface by using plasma immersion ion implantation and the use thereof

摘要

The present invention discloses at least one to omnidirectionally modify surfaces of organic or inorganic materials by means of plasma immersion ion implantation process to produce TiO_2-x films of the materials surfaces (x is about 0˜0.35). The method includes using oxygen which exists as plasma in the PIII vacuum chamber as the environment, creating and introducing titanium and other metallic plasmas which deposit on the materials surfaces, into the vacuum chamber by means of metal arc source, and apply a negative pulse potential of 500˜50,00 Hz and 0.1˜10 kV amplitude on the workpiece. And also the method to by means of implanting H, Ta or Nb into the TiO_2-x films to produce TiO_2-x films containing H, Ta or Nb. The materials with surface films fabricated by the present invention, when implanted into human body and contacting blood, have obvious improved blood compatibilities.