Method of manufacturing crystal of III-V compounds of the nitride system, crystal substrate of III-V compounds of the nitride system, crystal film of III-V compounds of the nitride system, and method of manufacturing device

摘要

A base crystal layer is formed on the surface of a basal body by growing, e.g., GaN comprising a III-Vcompound by MOCVD and then the base crystal layer 12 is etched. An intermediate crystal layer is formed by laterally growing GaN from windows formed in the base crystal layer by etching. In the intermediate crystal layer, an inner layer made of, e.g., AlGaN is formed. Then, the intermediate crystal layer is further etched and a top crystal layer is formed by laterally growing GaN from windows formed in the intermediate crystal layer by etching. An inner layer made of, e.g., AlGaN is formed in the top crystal layer. Development of dislocations is suppressed to some extent by the lateral growth when forming the intermediate crystal layer and the top crystal layer. Further, development of dislocations is suppressed by the inner layers.