首页>
外国专利>
Closing of micropipes in silicon carbide (SiC) using oxidized polysilicon techniques
Closing of micropipes in silicon carbide (SiC) using oxidized polysilicon techniques
展开▼
机译:使用氧化多晶硅技术封闭碳化硅(SiC)中的微管
展开▼
页面导航
摘要
著录项
相似文献
摘要
In order to close or cover micropipes, which generally are formed in SiC bulk material, one sputters or deposits or grows a layer of silicon on the backside of a micromachined silicon carbide diaphragm. This is followed by an oxidation process. In this approach, the deposition of silicon reduces or completely plugs the micropipes. After the silicon deposition, the wafer is oxidized which completely closes the otherwise reduced micropipes. Since the oxidation process is significantly faster than silicon and SiC, it is significantly easier to close even the largest of micropipes. The thickness of the silicon, the processing for depositing or growing silicon, and the process of oxidation can be adjusted to close micropipes in different SiC materials.
展开▼