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Cavity QED devices

机译:腔QED设备

摘要

QED devices emitting EM radiation are disclosed comprising structures in microscopic cavities. Steady EM radiation is produced from structures essentially permanently separated from the cavity walls, while transient EM radiation occurs by providing means to cause the temporary separation of the structures from the cavity walls. At ambient temperature, the EM radiation from atoms in structures not separated from the cavity walls is emitted at IR frequencies. However, the IR radiation is suppressed from atoms in structures separated from the cavity walls because the cavities have higher EM resonant frequencies. To conserve EM energy, the suppressed IR radiation from the structures is spontaneously emitted and combines at the QED cavity surfaces to collectively produce VUV light, the process called cavity QED induced VUV light. QED devices are disclosed utilizing cavity QED induced VUV light to excite the atoms and molecules on the cavity surfaces to produce VIS light, electrons, and ions.
机译:公开了发射EM辐射的QED装置,其包括在微腔中的结构。稳定的EM辐射是由与空腔壁基本永久分离的结构产生的,而瞬态EM辐射是通过提供使结构与空腔壁暂时分离的手段而发生的。在环境温度下,未与腔壁分离的结构中原子的EM辐射以IR频率发射。但是,由于空腔具有较高的EM谐振频率,因此与空腔壁分离的结构中的原子抑制了IR辐射。为了节省EM能量,从结构发出的被抑制的IR辐射会自发发射并在QED腔表面处合并以共同产生VUV光,这一过程称为腔QED诱导VUV光。公开了利用腔QED诱导的VUV光来激发腔表面上的原子和分子以产生VIS光,电子和离子的QED装置。

著录项

  • 公开/公告号US2003178616A1

    专利类型

  • 公开/公告日2003-09-25

    原文格式PDF

  • 申请/专利权人 PREVENSLIK THOMAS V.;

    申请/专利号US20020179641

  • 发明设计人 THOMAS V. PREVENSLIK;

    申请日2002-06-25

  • 分类号H01L29/06;H01L31/0328;H01L31/0336;H01L31/072;H01L31/109;

  • 国家 US

  • 入库时间 2022-08-22 00:10:51

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