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Byte-selectable EEPROM array utilizing single split-gate transistor for non-volatile storage cell
Byte-selectable EEPROM array utilizing single split-gate transistor for non-volatile storage cell
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机译:字节选择EEPROM阵列,利用单个裂栅晶体管用于非易失性存储单元
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摘要
A flash electrically-erasable, programmable read-only memory (EEPROM) with reduced area. The memory cells of the EEPROM are arranged into groups, and access to the groups is controlled by select transistors. In this manner the number of select transistors is reduced without requiring the entire array to be programmed or erased.
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