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Method for fabricating gate oxides in surrounding gate DRAM concepts
Method for fabricating gate oxides in surrounding gate DRAM concepts
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机译:环绕栅dram概念中制造栅氧化物的方法
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摘要
The invention relates to a vertical transistor for a DRAM memory cell, in which a deposited layer is used as a gate insulator, and this deposited layer simultaneously serves for electrical insulation between the transistor and a storage capacitor.
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