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Nitride based transistors on semi-insulating silicon carbide substrates
Nitride based transistors on semi-insulating silicon carbide substrates
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机译:半绝缘碳化硅衬底上的氮化物基晶体管
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摘要
A high electron mobility transistor (HEMT) is disclosed that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate, an insulating gallium nitride layer on the buffer layer, an active structure of aluminum gallium nitride on the gallium nitride layer, a passivation layer on the aluminum gallium nitride active structure, and respective source, drain and gate contacts to the aluminum gallium nitride active structure.
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