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Processes for cleaning and drying microelectronic structures using liquid or supercritical carbon dioxide

机译:使用液体或超临界二氧化碳清洁和干燥微电子结构的方法

摘要

A method of cleaning and removing water and entrained solutes during a manufacturing process from a microelectronic device such as a resist-coated semiconductor substrate, a MEM's device, or an optoelectronic device comprising the steps of: (a) providing a partially fabricated integrated circuit, MEM's device, or optoelectronic device having water and entrained solutes on the substrate; (b) providing a densified (e.g., liquid or supercritical) carbon dioxide drying composition, the drying composition comprising carbon dioxide and a drying adjunct, the drying adjunct selected from the group consisting of cosolvents, surfactants, and combinations thereof; (c) immersing the surface portion in the densified carbon dioxide drying composition; and then (d) removing the drying composition from the surface portion. Process parameters are controlled so that the drying composition is maintained as a homogeneous composition during the immersing step, the removing step, or both the immersing and removing step, without substantial deposition of the drying/cleaning adjunct or entrained solutes on the substrate.
机译:一种在制造过程中从微电子设备(例如涂有抗蚀剂的半导体衬底,MEM的设备或光电子设备)中清洁和去除水和夹带的溶质的方法,该方法包括以下步骤:(a)提供部分制造的集成电路, MEM的设备或光电设备,在衬底上有水和夹带的溶质; (b)提供一种致密的(例如液体或超临界)二氧化碳干燥组合物,该干燥组合物包含二氧化碳和干燥助剂,该干燥助剂选自助溶剂,表面活性剂及其组合; (c)将表面部分浸入致密的二氧化碳干燥组合物中;然后(d)从表面部分除去干燥组合物。控制工艺参数,以使干燥组合物在浸渍步骤,去除步骤或浸渍和去除步骤期间均保持为均匀的组合物,而干燥/清洁助剂或夹带的溶质基本上不沉积在基材上。

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