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Method for calculating the temperature rise profile of a power MOSFET

机译:功率MOSFET的温度上升曲线的计算方法

摘要

A computer program for calculating temperature rise profiles of a power MOSFET for different current waveforms, either single waveforms or multiple waveforms. The user enters the device part number identifying the device, the device Rdson at maximum temperature, and various calculation data, such as the calculation resolution and thermal resistance coordinates. The user also selects the desired current waveform from a library of waveforms. The program then calculates thermal resistance constants for the device as a function of time, and generates an array of thermal resistance values for each waveform subdivision based on the calculation resolution chosen. The instantaneous power values at each current/time subdivision are then calculated by the program and an array of power×thermal resistance difference terms is generated for each time interval. These terms are then summed to generate the temperature rise profile, and the results are displayed graphically or textually.
机译:一种计算机程序,用于针对不同的电流波形(单个波形或多个波形)计算功率MOSFET的温度上升曲线。用户输入识别设备的设备编号,最高温度下的设备Rdson以及各种计算数据,例如计算分辨率和热阻坐标。用户还可以从波形库中选择所需的电流波形。然后,程序根据时间计算设备的热阻常数,并根据所选的计算分辨率为每个波形细分生成一个热阻值数组。然后,由该程序计算每个电流/时间细分处的瞬时功率值,并在每个时间间隔内生成功率和时间的阵列;热阻差项。然后对这些项求和以生成温度上升曲线,并以图形或文本形式显示结果。

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