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Measurement of substrate temperature in a process chamber using non-contact filtered infrared pyrometry

机译:使用非接触式滤波红外高温法测量处理室中的基板温度

摘要

Methods and an apparatus for providing a non-contact probe for accurately measuring the temperature of a substrate in a process chamber are disclosed. One exemplary apparatus is a processing chamber, which includes a heating source, where the heating source heats the substrate. Also included is a window maintained at a substantially constant temperature. The window allows only a first wavelength spectrum of energy emitted from the heating source to pass. In addition, the window isolates the heating source from an internal region of the processing chamber. A probe configured to detect a second wavelength spectrum of energy emitted directly from the substrate is included. The energy emitted directly from the substrate corresponds to a temperature of the substrate, and the temperature of the substrate is provided to the controller, which adjusts an intensity of the heating source based on a set point temperature for the substrate.
机译:公开了用于提供非接触式探针以精确地测量处理腔室中的基板的温度的方法和设备。一种示例性设备是处理室,其包括加热源,其中加热源加热基板。还包括保持在基本恒定温度的窗口。该窗口仅允许从加热源发出的能量的第一波长光谱通过。另外,该窗口使加热源与处理室的内部区域隔离。包括被配置为检测直接从基板发射的能量的第二波长光谱的探针。直接从基板发出的能量对应于基板的温度,并且将基板的温度提供给控制器,该控制器根据基板的设定点温度来调节加热源的强度。

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