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Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through
Multiple channel implantation to form retrograde channel profile and to engineer threshold voltage and sub-surface punch-through
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机译:多通道注入以形成逆行通道轮廓并设计阈值电压和表面下穿通
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摘要
Submicron-dimensioned, MOSFET devices are formed using multiple implants for forming an impurity concentration distribution profile exhibiting three impurity concentration peaks at a predetermined depths below the semiconductor surface substrate. The inventive method reduces “latch-up” and “punch-through” with controllable adjustment of the threshold voltage.
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