Method for forming dielectric stack including second dielectric layer with lower undoped portion and upper doped portion

摘要

An intermediary dielectric layer is disposed between two dielectric layers thereby eliminating a flow stabilization step that may produce unwanted deposition that leads to peeling. A wafer is provided having an HDP layer. An undoped silicon glass layer is deposited on top of the HDP layer to improve adherence of a subsequently deposited PSG layer.