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Laser apparatus in which surface-emitting semiconductor is excited with semiconduct laser element and high-order oscillation modes are suppressed

机译:抑制表面发射半导体被半导体激光元件激发并抑制高阶振荡模式的激光装置

摘要

A laser apparatus includes a semiconductor laser element, a surface-emitting semiconductor element including a first mirror, and a second mirror. The semiconductor laser element emits first laser light having a first wavelength. The surface-emitting semiconductor element is excited with the first laser light, and emits second laser light having a second wavelength which is longer than the first wavelength. The first mirror in the surface-emitting semiconductor element is arranged on one side of the first active layer. The second mirror is arranged outside the surface-emitting semiconductor element so that the first and second mirrors form a resonator in which the second laser light resonates. The surface-emitting semiconductor element includes a structure for controlling a spatial mode of the second laser light.
机译:激光装置包括半导体激光元件,包括第一反射镜的表面发射半导体元件和第二反射镜。半导体激光元件发射具有第一波长的第一激光。表面发射半导体元件被第一激光激发,并发射具有比第一波长更长的第二波长的第二激光。表面发射半导体元件中的第一镜布置在第一有源层的一侧上。第二反射镜布置在表面发射半导体元件的外部,使得第一和第二反射镜形成第二激光在其中谐振的谐振器。表面发射半导体元件包括用于控制第二激光的空间模式的结构。

著录项

  • 公开/公告号US6594297B1

    专利类型

  • 公开/公告日2003-07-15

    原文格式PDF

  • 申请/专利权人 FUJI PHOTO FILM CO. LTD.;

    申请/专利号US20000659847

  • 发明设计人 TOSHIRO HAYAKAWA;

    申请日2000-09-11

  • 分类号H01S50/00;H01S30/91;H01S30/80;

  • 国家 US

  • 入库时间 2022-08-22 00:06:15

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