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Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light
Vertical cavity surface emitting laser that uses intracavity degenerate four wave mixing to produce phase-conjugated and distortion free collimated laser light
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机译:垂直腔表面发射激光器,利用腔内简并四波混频产生相位共轭且无畸变的准直激光
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摘要
The present invention is a “Vertical Cavity Surface Emitting Laser” or “VCSEL” design, wherein the VCSEL device produces phase-conjugated distortion free (reversal of intracavity distortions like diffraction, divergence, and light scattering) and collimated (plane-parallel phase fronts) laser-light emissions. Moreover, through what is called intracavity degenerative four-wave mixing (called four-wave mixing because traditionally there are four frequencies of phase-matched laser light involved in the phase-conjugate process), that occurs within the nonlinear materials of the “Phase Conjugated Vertical Cavity Surface Emitting Laser” or “PCVCSEL” device's vertical-cavity. Moreover, these nonlinear materials are located at the center of the PCVCSEL's vertical-cavity, wherein wave fronts produced by the PCVCSEL's two active-area laser pumps (called Pump 1 and Pump 2) will intersect with wave fronts produced by the PCVCSEL's two active-area laser probes (called Probe 1 and Probe 2), therein causing small and large spatial interference-gratings to form, which will ultimately form what is called a “phase conjugate mirror”. Furthermore, the semiconductor materials used in the PCVCSEL's vertical-cavity design must exhibit a nonlinear property, called the “third order susceptibility”, which is necessary for the production of a “phase conjugate mirror”. In-addition, materials that exhibit nonlinear third-order susceptibilities are not limited to semiconductor materials like (GaAs) or “Gallium-Arsenide”. (InAs) or “Indium-Arsenide”, (InP) or “Indium-Phosphide”, and (GaSb) or “Gallium-Antimonide”, moreover the ternary semiconductor materials having a Cubic crystal-symmetry of class-F43m and a space-group of “216”; but are also exhibited in photo-refractive materials like (KDP) or “Potassium-Dihydrogen-Phosphate”, and (ADP) or “Ammonium-Dihydrogen-Phosphate”, moreover the photo-refractive materials having a Tetragonal crystal-symmetry of class-142d and a space-group of “122”. Therefore, the photo-refractive materials that also exhibit nonlinear third-order susceptibilities can also be used in the center of the PCVCSEL's vertical-cavity design for producing phase-conjugated and distortion free optical radiation emissions.
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机译:本发明是“垂直腔表面发射激光器”。或“ VCSEL” VCSEL器件的设计,其中VCSEL器件产生无相位共轭畸变(腔内畸变的逆转,如衍射,发散和光散射)和准直(平面平行相前)激光发射。而且,通过所谓的腔内退化四波混合(之所以称为四波混合,是因为传统上在相共轭过程中涉及四个频率的相匹配激光),它发生在“相”的非线性材料内。共轭垂直腔面发射激光器或“ PCVCSEL”设备的垂直腔。而且,这些非线性材料位于PCVCSEL垂直腔的中心,其中PCVCSEL的两个有源区域激光泵(称为Pump 1 B>和Pump 2 B >)将与PCVCSEL的两个有源区域激光探头(称为Probe 1 B>和Probe 2 B>)产生的波前相交,从而在空间上造成大小不等的干涉形式,最终将形成所谓的“相位共轭镜”。此外,在PCVCSEL的垂直腔设计中使用的半导体材料必须表现出非线性特性,称为“三阶磁化率”,这对于生产“相位共轭镜”是必需的。另外,表现出非线性三阶磁化率的材料不限于半导体材料,例如(GaAs)或“砷化镓”。 (InAs)或“砷化铟”,(InP)或“磷化铟”和(GaSb)或“锑化镓”,而且具有立方晶体对称性为F43类的三元半导体材料< I> m I>和一个“ 216”的空间组;但是也存在于光折光材料中,例如(KDP)或“磷酸二氢钾”和(ADP)或“磷酸二氢铵”,而且具有四方晶体对称性的光折变材料class- 142 B> d I>和“ 122”的空间组。因此,还具有非线性三阶磁化率的光折变材料也可以用于PCVCSEL垂直腔设计的中心,以产生相位共轭和无畸变的光辐射。
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