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Gas distribution plate assembly for providing laminar gas flow across the surface of a substrate

机译:气体分配板组件,用于提供层流气流穿过基板表面

摘要

A baffle plate assembly (12) is provided for distributing gas flow into an adjacent process chamber cavity (20) containing a semiconductor wafer to be processed. The baffle plate assembly (12) comprises a generally planar upper baffle plate (14) fixedly positioned above a generally planar lower baffle plate (16) and covered by a process chamber top wall (17). The top wall (17) and the lower baffle plate form a plenum therebetween, the plenum operating at a higher pressure than the process chamber cavity (20) during operation of the device, At least the lower baffle plate (16) has a pattern of apertures (30) formed therein for permitting gas to pass therethrough and into the wafer process chamber. The upper baffle plate (16) and the lower baffle plate (14) are positioned generally parallel to each other, and the upper baffle plate (14) is smaller than the lower baffle plate (16). Preferably, the lower baffle plate (14) is comprised of low-alloy anodized aluminum, and the upper baffle plate (16) is comprised of sapphire-coated quartz.
机译:提供了挡板组件( 12 ),用于将气流分配到包含要处理的半导体晶片的相邻处理腔腔( 20 )中。挡板组件( 12 )包括一个大致为平面的上挡板( 14 ),该上挡板固定定位在一个大致为平面的下挡板( 16 )上方并被处理室顶壁( 17 )覆盖。顶壁( 17 )和下挡板之间形成一个气室,该气室在设备操作期间的压力高于处理室腔室( 20 )的压力,至少下挡板( 16 )具有在其中形成的孔( 30 )的图案,以允许气体通过并进入晶片处理室。上挡板( 16 )和下挡板( 14 )大致平行放置,上挡板( 14 >)小于下挡板( 16 )。优选地,下部挡板( 14 )由低合金阳极氧化铝构成,上部挡板( 16 )由蓝宝石涂层石英构成。

著录项

  • 公开/公告号US6537419B1

    专利类型

  • 公开/公告日2003-03-25

    原文格式PDF

  • 申请/专利权人 KINNARD DAVID W.;

    申请/专利号US20000558606

  • 发明设计人 DAVID W. KINNARD;

    申请日2000-04-26

  • 分类号H05H10/00;C23C160/00;

  • 国家 US

  • 入库时间 2022-08-22 00:05:52

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