首页> 外国专利> GAS DISTRIBUTION PLATE ASSEMBLY FOR PROVIDING LAMINAR GAS FLOW ACROSS THE SURFACE OF A SUBSTRATE

GAS DISTRIBUTION PLATE ASSEMBLY FOR PROVIDING LAMINAR GAS FLOW ACROSS THE SURFACE OF A SUBSTRATE

机译:气体分配板组件,用于在整个基体表面上提供层流

摘要

A baffle plate assembly (12) is provided for distributing gas flow into an adjacent process chamber cavity (20) containing a semiconductor wafer to be processed. The baffle plate assembly (12) comprises a generally planar upper baffle plate (14) fixedly positioned above a generally planar lower baffle plate (16) and covered by a process chamber top wall (17). The top wall (17) and the lower baffle plate form a plenum therebetween, the plenum operating at a higher pressure than the process chamber cavity (20) during operation of the device. At least the lower baffle plate (16) has a pattern of apertures (30) formed therein for permitting gas to pass therethrough and into the wafer process chamber. The upper baffle plate (14) and the lower baffle plate (16) are positioned generally parallel to each other, and the upper baffle plate (14) is smaller than the lower baffle plate (16). Preferably, the lower baffle plate (16) is comprised of low-alloy anodized aluminum, and the upper baffle plate (14) is comprised of sapphire-coated quartz. In a 300 millimeter (mm) embodiment, the apertures (30) in the lower baffle plate (16) are arranged in a pattern such that each aperture (30) is equidistant from any adjacent aperture. The upper baffle plate (14) is provided with slightly larger apertures (28) formed therein in a concentric multiply circular (radial) pattern. The upper baffle plate is also provided with an centrally located impingement plate (62). In a 200 mm embodiment, the apertures (30) in the lower baffle plate (16) are arranged in a concentric multiply circular (radial) pattern, and the upper baffle plate (14) is apertureless. The 200 mm and 300 mm embodiments of the baffle plate assemblies are interchangeable as assembled onto a common process chamber platform. IMAGE
机译:提供了挡板组件(12),用于将气流分配到包含要处理的半导体晶片的相邻处理腔室(20)中。挡板组件(12)包括大致平坦的上挡板(14),其固定地定位在大致平坦的下挡板(16)上方并被处理室顶壁(17)覆盖。顶壁(17)和下部挡板在其间形成增压室,该增压室在装置操作期间在比处理腔室腔室(20)更高的压力下工作。至少下挡板(16)具有在其中形成的孔(30)的图案,以允许气体通过并进入晶片处理室。上挡板(14)和下挡板(16)大致平行地设置,上挡板(14)比下挡板(16)小。优选地,下部挡板(16)由低合金阳极氧化铝构成,而上部挡板(14)由蓝宝石涂层石英构成。在300毫米(mm)的实施例中,下挡板(16)中的孔(30)被布置成使得每个孔(30)与任何相邻的孔等距。上挡板(14)设有以同心的多个圆形(径向)图案形成的稍大的孔(28)。上挡板也设置有位于中心的冲击板(62)。在200mm的实施例中,下挡板(16)中的孔(30)以同心的多个圆形(径向)图案布置,并且上挡板(14)是无孔的。挡板组件的200毫米和300毫米实施例在组装到公共处理室平台上时可以互换。 <图像>

著录项

  • 公开/公告号KR100587629B1

    专利类型

  • 公开/公告日2006-06-08

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010022637

  • 发明设计人 키날드데이비드윌리엄;

    申请日2001-04-26

  • 分类号H01L21;

  • 国家 KR

  • 入库时间 2022-08-21 21:23:41

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