Ferroelectric memory having a BaTiO3 recording layer oriented in a 111 direction

摘要

A ferroelectric memory element and an electronic apparatus provided with this ferroelectric memory element are provided with a thin film recording layer of less than 50 nm film thickness having a high polarization moment and a high Curie temperature, wherein a recording layer of BaTiO₃ is fabricated so as to be oriented in a pseudo-cubic system 111 direction in a trigonal crystal structure, and in order to increase the polarization moment and Curie temperature, the unit cell in BaTiO₃ film is elongated more than 2% in the pseudo-cubic system 111 direction compared with the unit cell in a bulk material of BaTiO₃, wherein in order to produce lattice strain in the crystal structure of the recording layer, the recording layer is grown epitaxially on the electrode layer that serves as the base layer, the ferroelectric memory element being provided with the recording layer, and the electronic apparatus being provided with the ferroelectric memory element.