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Semiconductor device which prevents leakage of noise generated in a circuit element forming area and which shields against external electromagnetic noise

机译:防止在电路元件形成区域中产生的噪声泄漏并且屏蔽外部电磁噪声的半导体器件

摘要

A semiconductor device of a CSP structure is obtained by forming projection electrodes on a plurality of circuit element forming areas of a semiconductor wafer substrate, and then dividing the wafer into chips. Wiring patterns connected to connection pads for signal transmission are provided on the upper surface of an insulating film formed on the circuit element forming areas, and a conductive layer connected to a connection pad connected to a ground potential is provided on the resultant structure except for on the wiring patterns and on areas near the wiring patterns. Further, a thin film circuit element may be provided at the same layer as the conductive layer or below the conductive layer.
机译:通过在半导体晶片基板的多个电路元件形成区域上形成突起电极,然后将晶片分割成芯片,来获得CSP结构的半导体装置。在形成于电路元件形成区域上的绝缘膜的上表面上,设置有与用于信号传输的连接焊盘连接的配线图案,在除了导体上以外的结构上,还设置有与连接至接地电位的连接焊盘连接的导电层。布线图以及布线图附近的区域。此外,薄膜电路元件可以设置在与导电层相同的层上或者在导电层的下方。

著录项

  • 公开/公告号US6501169B1

    专利类型

  • 公开/公告日2002-12-31

    原文格式PDF

  • 申请/专利权人 CASIO COMPUTER CO. LTD.;

    申请/专利号US20000708379

  • 申请日2000-11-08

  • 分类号H01L231/20;H01L230/53;H01L234/80;H01L235/20;H01L294/00;H01L214/763;

  • 国家 US

  • 入库时间 2022-08-22 00:04:59

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