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Method for contact diffusion of impurities into diamond and other crystalline structures and products

机译:杂质接触扩散到金刚石和其他晶体结构及产品中的方法

摘要

A low free energy method for more rapidly diffusing an impurity as exemplified by boron, into a natural or synthetic diamond or other crystalline element in powdered or granular form, without degradation of the crystalline structure. The present method includes the steps of providing a mixture of the diamond or other crystalline element and the impurity in a solid phase; treating the mixture to bring the impurity into conforming contact with the outer surface of the crystalline element; and heating the mixture to a temperature between about 200° C. and about 2000° C. As an example, a diamond is disclosed having boron as an impurity diffused into the crystalline structure thereof by the present method, at a ratio of from about 0.1 part of the impurity per 1 million parts of the diamond to about 600 parts of the impurity per 1 million parts of the diamond.
机译:一种低自由能方法,用于更快地将以硼为代表的杂质扩散成粉末状或颗粒状的天然或合成金刚石或其他晶体元素,而不会破坏晶体结构。本发明的方法包括以下步骤:提供金刚石或其他晶体元素与杂质的固相混合物。处理混合物以使杂质与晶体元素的外表面一致接触;并将混合物加热至约200℃的温度。约2000℃。作为一个例子,公开了一种金刚石,其具有通过本方法扩散到其晶体结构中的杂质的硼,其比例为每百万份金刚石中约0.1份杂质与约600份金刚石中的硼。百万分之几的钻石中的杂质。

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