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Extraction of impurities from structures containing mercury, cadmium, zinc, or tellurium, and impurities
Extraction of impurities from structures containing mercury, cadmium, zinc, or tellurium, and impurities
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机译:从含有汞,镉,锌或碲和杂质的结构中提取杂质
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摘要
Impurities are extracted from a thin-film device structure based on mercury, cadmium, zinc, and/or tellurium, such as HgCdTe, CdTe, CdZnTe, or HgCdZnTe. The impurities are extracted by furnishing a sink medium comprising molten bismuth, and contacting the contaminated structure to the sink medium for a period of time sufficiently long that impurities diffuse out of the structure and into the bismuth for removal. The molten bismuth may additionally contain small amounts of one or more of the major components of the structure (mercury, cadmium, zinc, and/or tellurium) to inhibit loss of these elements from the structure.
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