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Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
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机译:具有应力外层的磁电子元件,其构造成用于改变开关能垒
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摘要
A magnetoelectronics element (40) is provided that is comprised of a first magnetic layer (42), a first tunnel barrier layer (44) on the first magnetic layer (42), a second magnetic layer (46) on the first tunnel barrier layer (44) and a stressed over-layer (48) on the second magnetic layer (46), which is configured to alter a switching energy barrier of the second magnetic layer (46).
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