Integrally fabricated gated pixel elements and control circuitry for flat-panel displays

摘要

Triode pixel devices and complementary triode logic devices for control of the pixel devices are disclosed. The pixel and logic devices are integrally fabricated in arrays suitable for full color flat display panels. Both pixel and logic elements are operated in a gate controlled avalanche mode. Pixel elements are formed from organic or inorganic electroluminescent (EL) materials ohmically contacted by low work function metal. The depletion region necessary for controlling EL intensity or preventing EL avalanche is affected by potentials to a gate element injected into the EL material. The shape of the gate element multiplies the field produced by the gate potential. Luminescence is directly viewed from the brighter, lateral EL emission not available in the prior art. The complementary logic devices are formed from separate depositions of n-type and p-type silicon with their respective gates connected in common. A manufacturing process to produce economical full color, large area, flat-panel, displays of high pixel density and redundancy is described. Small area high pixel density displays suitable for head-mounted military, avionic, and virtual reality display products are also discussed.