DEPOSITION OF SILICON DIOXIDE AND SILICON OXYNITRIDE FILMS USING BIS (TERTIARYBUTYLAMINO) SILANE

摘要

A process for the deposition on a substrate of a film of an oxygen containing silicon compound selected from the group consisting of silicon dioxide and silicon oxynitride by reacting bis (tertiarybutylamino) silane at an elevated temperature with a reactant gas selected from the group consisting of oxygen, ozone and mixtures thereof when said silicon compound is silicon dioxide or selected from the group consisting of a nitrogen oxide, ammonia and mixtures thereof when said silicon compound is silicon oxynitride. 3843 ט' בשבט התשס" ג - January 12, 2003