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PROCESS FOR CARRYING OUT THE MAGNETIC FIELD SENSOR ON FIELD EMISSION

机译:在场发射中实现磁场传感器的过程

摘要

The invention relates to a process for carrying out the magnetic field sensor based on field emission stabilized by means of an active MOSFET device (source of constant current in saturation conditions), for which, in order to stabilize the emission current, to increase the emission current and implicitly to increase the device structure sensitivity, the emitters are structured in a MOSFET drain. According to the invention, the process consists in carrying out the emitters by two-step corroding with reactive ions (RIE), first a corroding in a mixture of CT 4 and O 2 at higher RF powers and then the corroding in a mixture of SF 6 and O 2, at lower RF powers, there being achieved p/n junctions by ion implanting with phosphorus ions in the vertical emitters in the drain and in the source both for controlling and stabilizing the emission current and for obtaining a multiplication of the emission current by the effect of conductivity induced by electron bombardment. The thermic oxidation and sharpening of the emitters are performed in different technological steps in order to control both the oxide thickness, consequently, the emitters height and curvature radius of the emitters as well.
机译:本发明涉及一种用于基于通过有源MOSFET器件(饱和条件下的恒定电流源)稳定的场发射来执行磁场传感器的方法,为此,为了稳定发射电流而增加发射电流并隐式地增加了器件结构的灵敏度,发射极被构造在MOSFET漏极中。根据本发明,该方法包括通过用反应离子(RIE)进行两步腐蚀来执行发射器,首先是在较高RF功率下在CT 4和O 2的混合物中进行腐蚀,然后在SF的混合物中进行腐蚀。如图6和O 2所示,在较低的RF功率下,通过将磷离子离子注入到漏极和源极中的垂直发射极中来实现p / n结,以控制和稳定发射电流并获得发射倍增电流受电子轰击引起的电导率的影响。发射极的热氧化和锐化在不同的工艺步骤中执行,以便同时控制氧化物厚度和发射极的高度以及发射极的曲率半径。

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