首页> 外国专利> SPIN VALVE SENSOR WITH PINNED LAYER AND ANTIPARALLEL (AP) PINNED LAYER STRUCTURE PINNED BY A SINGLE PINNING LAYER

SPIN VALVE SENSOR WITH PINNED LAYER AND ANTIPARALLEL (AP) PINNED LAYER STRUCTURE PINNED BY A SINGLE PINNING LAYER

机译:具有钉扎层和由单钉扎层钉扎的反平行(AP)钉扎层结构的自旋阀传感器

摘要

SPIN VALVE SENSOR WITH PINNED LAYER AND ANTIPARALLEL (AP) PINNED LAYER STRUCTUREPINNED BI' A SINGLE PINNING LAYERABSTRACT OF THE DISCLOSUREA spin valve sensor includes an antiferromagnetic pinning layer which islocated between and is exchange coupled to a single pinned layer and an antiparallel(AP) pinned layer structure and a nonmagnetic electrically conductive spacer layerwhich is located between and interfaces the single pinned layer as well as a free layerstructure. With this arrangement an antiparallel coupling layer, which is typically ruthenium, and a second AP pinned layer in the AP pinned layer structure are remotely located from the spacer layer so that the antiparallel coupling layer and the second AP pinned layer do not degrade the magnetoresistive coefficient dr/R of thespin valve sensor.Figure 2
机译:带钉层和反平行(AP)钉层结构的自旋阀传感器置顶BI'单个固定层披露摘要自旋阀传感器包括反铁磁钉扎层,该钉扎层是位于之间并交换耦合到单个固定层和反平行(AP)固定层结构和非磁性导电间隔层它位于单钉扎层和自由层之间并与之连接结构体。通过这种布置,通常为钌的反平行耦合层和AP固定层结构中的第二AP固定层远离间隔层,以使反平行耦合层和第二AP固定层不会降低磁阻系数的dr / R旋转阀传感器。图2

著录项

  • 公开/公告号SG95688A1

    专利类型

  • 公开/公告日2003-04-23

    原文格式PDF

  • 申请/专利号SG20020000829

  • 发明设计人 HARRY S. GILL;

    申请日2002-02-18

  • 分类号G11B5/39;G11B5/33;G11B5/127;

  • 国家 SG

  • 入库时间 2022-08-22 00:00:48

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