ANTIFERROMAGNETIC LAYER SYSTEM AND METHODS FOR MAGNETICALLY STORING DATA IN ANTIFERROMAGNETIC LAYER SYSTEMS OF THE LIKE

摘要

The invention is used in the field of materials engineering and relates to antiferromagnetic layer systems as well as to methods for magnetically storing data that can be used, for example, in computer hard disks. The aim of the invention consists of providing an antiferromagnetic layer system and methods with which a specific writing and reading of information is made possible in antiferromagnetic layer systems of the aforementioned type. To this end, an antiferromagnetic layer system is provided, which consists of at least one ferromagnetic (1) and of at least one antiferromagnetic layer (2), whereby the Curie temperature of the ferromagnetic layer material is greater than the blocking temperature of the antiferromagnetic layer material. In addition, the ferromagnetic and antiferromagnetic layer(s) are coupled to one another at least with regard to their magnetization configurations by means of exchange anisotropy effects, and the layer thickness of the antiferromagnetic layer(s) is a function of the operating temperature of the employed antiferromagnetic layer system, whereby the layer thicknesses also increase with increasing operating temperatures.