RULE BASE OPC EVALUATING METHOD, AND SIMULATION BASE OPC MODEL EVALUATING METHOD

摘要

A rule base OPC evaluating method and a simulation base OPC model evaluating method for correctly evaluating line width controllability. By inputting design data on a mask pattern of a mask for evaluation in a rule base OPC, a wafer for evaluation is fabricated based on correction data on the mask pattern of the obtained mask for evaluation, and the length of a gate pattern of the wafer for evaluation is measured. Simulation data corresponding to the gate pattern over the entire surface of the wafer for evaluation is output based on a simulation base OPC model subjected to process calibration. The rule base OPC is evaluated by comparing measurement data of the gate pattern for evaluation with simulation data.