首页>
外国专利>
METHOD OF POLISHING CVD DIAMOND FILMS BY OXYGEN PLASMA
METHOD OF POLISHING CVD DIAMOND FILMS BY OXYGEN PLASMA
展开▼
机译:氧等离子体抛光CVD金刚石薄膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O2 gas and a fluorinated gas such as SF6, NF3, and C2F6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm2 and about 1.1 watts/cm2 for a first duration, and maintaining temperature in the reactor at between about 200 DEG to about 400 DEG . The method may alternatively comprise disposing a sputter gas such as Ar,O2 or N2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm2 and about 7.5 watts/cm2 for a first duration, and performing a sputter etch, disposing O2 gas and a fluorinated gas such as SF6, NF3, and C2F6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm2 and about 3.0 watts/cm2 for a second duration.
展开▼
机译:一种在反应器中用低功率密度等离子体抛光金刚石膜表面的方法,该方法包括在反应器中放置O2气体和氟化气体,例如SF6,NF3和C2F6,向反应器提供功率,以达到功率密度在第一持续时间内,反应器中的温度在约1.0瓦特/ cm 2至约1.1瓦特/ cm 2之间,并将反应器中的温度保持在约200至约400℃之间。该方法可替代地包括:将诸如Ar,O 2或N 2的溅射气体布置在反应器中,向反应器提供功率,使得在第一持续时间内反应器中的功率密度在约3.0瓦/ cm 2至约7.5瓦/ cm 2之间。然后进行溅射蚀刻,将O2气体和氟化气体(例如SF6,NF3和C2F6)放置在反应堆中,并向反应堆提供功率,以使反应堆中的功率密度在1.5瓦特/平方厘米和3.0之间瓦特/平方厘米,持续第二秒。
展开▼