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Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
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机译:使用倍半硅氧烷树脂衍生的二氧化硅薄膜改性红外反射率
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摘要
Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorption lines change in proportion to a small electric current flowing through the material. These changes occur with response times of the order of seconds, and show time constants of the order of minutes to reach stationary values.
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