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1 2 Semiconductor memory device capable of implementing first or second memory architecture and memory system using the same
1 2 Semiconductor memory device capable of implementing first or second memory architecture and memory system using the same
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机译:能够实现第一或第二存储器架构的半导体存储设备以及使用该半导体存储设备的存储系统
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摘要
PURPOSE: A semiconductor memory device and a memory system adopting the semiconductor memory device are provided to easily change a memory architecture, and to enhance a redundancy flexibility so that it can reduce a power consumption. CONSTITUTION: The device comprises the first memory group(301), the second memory group(302) and DQ(Data qualifier) pins(310, 320). Each memory group(301, 302) includes four memory banks(B0-B3). Each memory bank outputs eight pieces of data. The eight pieces of data are output to sixteen DQ pins(310, 320) via sixty-four data lines. The number of the actually used data lines is thirty-two. Namely, the eight pieces of data, output by each memory bank(B0-B3), of the first memory group(301) are output to the eight DQ pins(310) via the data bus lines, and the eight pieces of data, output by each memory bank(B0-B3), of the second memory group(302) being output to the eight DQ pins(320) via the data bus lines.
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