首页> 外国专利> A METHOD OF CLEANING VACUUM CHAMBER FOR SURFACE PROCESS OF ORGANIC INSULATING LAYER AND A METHOD OF FABRICATING A LIQUID CRYSTAL DISPLAY DEVICE USING THEREOF

A METHOD OF CLEANING VACUUM CHAMBER FOR SURFACE PROCESS OF ORGANIC INSULATING LAYER AND A METHOD OF FABRICATING A LIQUID CRYSTAL DISPLAY DEVICE USING THEREOF

机译:一种用于有机绝缘层表面处理的真空腔的清洁方法以及一种利用该方法制造液晶显示器的方法

摘要

PURPOSE: A method for cleaning a vacuum chamber for processing the surface of an organic insulating layer and a method for fabricating a liquid crystal display using the cleaning method are provided to continuously process the surface of an organic passivation layer without interrupting processes. CONSTITUTION: A gas is filled in a vacuum chamber(30) having organic impurities(39) deposited on the inner wall of the chamber. RF power is applied to the vacuum chamber to make plasma from the gas to collide plasma ions with the organic impurities on the inner wall of the vacuum chamber, to generate impurity gases. The impurity gases are exhausted. The impurities are carbon compounds and impurity gases include CO, CO2 and SF4.
机译:目的:提供一种用于清洁用于处理有机绝缘层的表面的真空室的方法和一种用于使用该清洁方法制造液晶显示器的方法,以在不中断工艺的情况下连续地处理有机钝化层的表面。组成:将气体填充到真空室(30)中,该室的内壁上沉积有有机杂质(39)。将RF功率施加到真空室,以使气体中的等离子体与等离子体离子与真空室的内壁上的有机杂质碰撞,从而产生杂质气体。杂质气体被排出。杂质是碳化合物,杂质气体包括CO,CO2和SF4。

著录项

  • 公开/公告号KR20030052783A

    专利类型

  • 公开/公告日2003-06-27

    原文格式PDF

  • 申请/专利权人 LG.PHILIPS LCD CO. LTD.;

    申请/专利号KR20010082817

  • 发明设计人 KIM DONG HUI;KIM YUN SEONG;

    申请日2001-12-21

  • 分类号G02F1/13;

  • 国家 KR

  • 入库时间 2022-08-21 23:46:46

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