- ESCAP and t-BOC type of DUV resist compound

摘要

PURPOSE: An ESCAP-t-BOC-combined compound for deep ultraviolet (DUV) resist and a photolithography method using the compound are provided, to minimize the loss of resist, to enable an etching process to be performed easily and to improve the CD uniformity. CONSTITUTION: The compound comprises an ESCAP part and a t-BOC part and is represented by the formula, wherein n1 is an integer of 0-10; n2 is an integer of 0-2; and R' is an aromatic group or an aliphatic group. Preferably R' is an aromatic group of C6-C18 or an aliphatic group of C1-C20. Preferably the pattern of semiconductor is prepared by using the resist containing the compound of the formula, and can be developed by using only deionized water without using a basic developer.