/ Method of Manufacturing a Mo/Si Reflective Multilayer for Extreme Ultra Violet Lithography by Controlling Structural Factor

摘要

PURPOSE: A molybdenum-silicon reflection type multilayered thin film for an ultraviolet exposure process by controlling a structure factor is provided to increase yield by forming a multilayered thin film mirror having high reflectivity regarding the light of an ultraviolet region. CONSTITUTION: A dual structure of a molybdenum layer and a silicon layer is repeatedly stacked on a semiconductor substrate in a period of 40. At least one of the lowermost molybdenum layers in the first to fifth periods of the stack structure is 2.9-3.3 nanometer in thickness. The molybdenum layer of the stack structure in the period of sixth or higher is 2.7-2.9 nanometer in thickness and the silicon layer is 3.9-4.1 nanometer in thickness.