ZnO based quantum well and/or superlattice nanowires

摘要

PURPOSE: Provided are zinc oxide nanowires with quantum well or superlattice structures obtained from accumulating ZnO and materials with a similar lattice constant alternately by organic chemical vapor deposition without catalysts. CONSTITUTION: The zinc oxide nanowires with quantum well or superlattice structures having a 1-500nm of diameter are formed by alternately accumulating the following materials: (i) ZnO, and Zn(1-x)MgxO(0=x=1) or Zn(1-x)CdxO(0=x=1) controlling the band gap, obtained by adding Mg or Cd to ZnO; (ii) ZnO, and Zn(1-x)MnxO(0=x=1) or Zn1-xCoxO(0=x=1) having a magnetic characteristic, obtained by doping Mn or Co to ZnO; (iii) ZnO, and nitride semiconducting materials such as GaN, AlN, InN and alloys thereof.