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Fabrication Method of Cu-Cr Contact Materials for Vacuum Switches

机译:真空开关用Cu-Cr触头材料的制备方法

摘要

PURPOSE: A copper-chromium contact material for a vacuum switch and a manufacturing method thereof are provided to manufacture a wholesome Cu-Cr contact material by including a uniform and dispersed sintering structure of Cr particle in Cu matrix. CONSTITUTION: A mixing powder of a copper(Cu) powder and a chromium(Cr) powder is put and pressurized in a mold to manufacture a molding material. A content of the chromium(Cr) ranges 25-75 weight %. The molding material is sintered to a solid status at a temperature lower than a melting point of the copper to obtain a solid-phase sintered body. The temperature lower than a melting point of the copper ranges 900-1075°C. The solid-phase sintered body is heated to a temperature higher than the melting point of the copper to perform a liquid-phase sintering operation. The temperature higher than a melting point of the copper ranges 1100-1250°C.
机译:目的:提供一种用于真空开关的铜-铬接触材料及其制造方法,以通过在铜基体中包括均匀且分散的铬颗粒烧结结构来制造有益健康的Cu-Cr接触材料。组成:将铜(Cu)粉和铬(Cr)粉的混合粉放入模具中并加压以制造成型材料。铬(Cr)的含量为25-75重量%。在低于铜的熔点的温度下将模制材料烧结成固态,以获得固相烧结体。低于铜的熔点的温度为900-1075℃。固相烧结体被加热到高于铜的熔点的温度,以执行液相烧结操作。高于铜的熔点的温度为1100-1250℃。

著录项

  • 公开/公告号KR100400354B1

    专利类型

  • 公开/公告日2003-10-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20000074135

  • 发明设计人 도정만;홍경태;박종구;김미진;

    申请日2000-12-07

  • 分类号H01H1/02;

  • 国家 KR

  • 入库时间 2022-08-21 23:45:07

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