Production of fine resist structures in a photoresist layer during the manufacture of microelectronic components by applying a photoresist layer, applying and exposing 2 masks at different wavelengths and developing resist

摘要

Production of fine resist structures in a photoresist layer (2) during the manufacture of microelectronic components comprises applying a photoresist layer; applying a first mask (1) having a first structure (5) transparent for a first wavelength ( lambda 1); irradiating the photoresist layer through the structure of the first mask with the wavelength ( lambda 1); removing the mask; applying a second mask having a second structure transparent for a second wavelength ( lambda 2); irradiating the photoresist layer through the structure of the second mask with the wavelength ( lambda 2); removing the second mask; and developing the resist layer. Preferred Features: The difference between the first and second wavelengths is at least 30 nm. The photoresist layer is heated treated after the first mask is applied and after the second mask is removed.