Magnetic memory arrangement has second supply device that sets current direction according to information to be written, first current supply device that changes current direction

摘要

The arrangement has a field of magnetic memory cells along two mutually perpendicular directions, electrical conductors along both directions with memory cells at the intersection points, first and second current supplies for selectively supplying leads in the first and second directions respectively, whereby the second supply device sets the current direction according to information to be written. The first device changes the current direction. The arrangement has a cell field of magnetic memory cells arranged along first and second mutually perpendicular directions, electrical conductors (3a-3d;4a-4d) along both directions with magnetic memory cells (5aa-5dd) at the intersection points of the conductors, first and second current supplies (6,7) for selectively supplying leads in the first and second directions respectively, whereby the second supply device sets the current direction according to information to be written. The first current supply device changes the direction of the current. AN Independent claim is also included for the following: a magnetic memory cell.