Transistor, used as a MOS transistor, has a contact region containing praseodymium silicide between a semiconductor region and a metallic conducting region

摘要

Transistor has a contact region (24, 26) containing praseodymium silicide between a semiconductor region (12) and a metallic conducting region. An Independent claim is also included for the production of an integrated circuit on a substrate comprising depositing a metal oxide layer on the silicon surface of the substrate, depositing a silicon layer on the metal oxide layer, depositing a covering layer on the silicon layer, removing the covering layer in one or more lateral sections and tempering the substrate in a reducing, preferably oxygen-free atmosphere. Preferably the contact region has a lateral extension of less than 200 nm or less than 100 nm. The contact region additionally contains a silicide of zirconium or hafnium.