Surface evaluation of semiconductors and conductors using microwave analysis, whereby the source is moved relative to the surface being examined and Doppler principles applied to increase the inspection speed

摘要

Method for analysis of a surface (6) using microwaves, whereby microwaves are transmitted towards (11) the surface and reflected or back-scattered from it so that they can be analyzed to make conclusions about the surface, e.g. its level of corrosion. To increase the area of a surface that can be analyzed the microwave source is moved relative to the surface. A Doppler treatment of the results is applied with the results normalized so that they are independent of the relative movement speed.