Negative resist production, for structurizing semiconductor substrate in microchip production, uses polymer with acid-labile groups releasing anchor groups co-ordinating with reactive groups of amplifying agent containing silicon

摘要

Production of amplified negative resist structures uses a chemically amplified resist containing a polymer (IA) with acid-labile groups, releasing an anchor group (AG) to give a polymer (IB) with changed polarity, a photoacid and a solvent (II). Development after exposure uses a developer containing a solvent for (IA) but not (IB) and an agent containing silicon and group(s) co-ordinating with AG. Production of amplified negative resist structures comprises: (1) coating a substrate with a chemically amplified resist containing a polymer (IA) with acid-labile groups, which release an anchor group (AG), giving a polymer (IB) with changed polarity, a photoacid and a solvent (II); (2) removing (II); (3) selective exposure to liberate acid; (4) contrasting by releasing AG; (5) development with a developer containing a solvent, in which (IA) is soluble but (IB) is largely insoluble or swellable, and an amplifying agent containing silicon, which contains reactive group(s) that can co-ordinate with AG; and (6) removing excess developer.