首页> 外国专利> Plate-like ceramic molded body used as substrate plate in the manufacture of magnetic reading-writing heads is made from liquid phase sintered silicon carbide

Plate-like ceramic molded body used as substrate plate in the manufacture of magnetic reading-writing heads is made from liquid phase sintered silicon carbide

机译:在磁性读写头的制造中用作基板的板状陶瓷成型体由液相烧结碳化硅制成

摘要

Plate-like ceramic molded body has a surface A lying between 15 and 1000 cm2, a thickness d of 0.2-5 mm and is made from liquid phase sintered silicon carbide. The molded body has a planarity of less than 0.05 x 10-3 of its characteristic dimension, a front side having a roughness Ra less than 3, a density of more than 99% of its theoretical density, especially more than 99.9% of its theoretical density, pores of a maximum size less than 10, especially 2 microns m, a ferromagnetic amount of its magnetization in an external field of less than 10-2, preferably more than 10-3 e.m.u/cm3, a specific electrical resistance rho more than 103 OMICRON cm measured at a measuring voltage of 1 V, a heat conductivity of more than 70 W/mK, a fracture toughness of more than 3.5 Mpam1/2, an edge toughness of less than 300 N/mm, a four-point bending strength of more than 400 MPa, a Vickers hardness of more than 20 GPa, and an elastic modulus of more than 380 GPa. An Independent claim is also included for a process for the production of a molded body. Preferred Features: The molded body contains SiC crystals consisting of a SiC core and SiC mixed crystals surrounding the core or only SiC mixed crystals, and a binder phase having a crystalline portion and an amorphous portion. The SiC mixed crystals also contain Al, O and/or N.
机译:板状陶瓷成型体的表面A在15至1000cm 2之间,厚度d为0.2-5mm,并且由液相烧结的碳化硅制成。成型体的平面度小于其特征尺寸的0.05×10 -3,前侧的粗糙度Ra小于3,密度大于其理论密度的99%,特别是大于99.9%的理论密度。其理论密度,最大尺寸小于10,特别是2微米的孔,在小于10 -2,优选大于10 -3 emu / cm 3的外场中其磁化的铁磁量>,在1V的测量电压下测得的比电阻rho大于10 3 OMICRON cm,导热率大于70W / mK,断裂韧性大于3.5Mpam 1/2,边缘韧性小于300 N / mm,四点弯曲强度大于400 MPa,维氏硬度大于20 GPa,弹性模量大于380 GPa。还包括独立权利要求,用于生产成型体。优选特征:成型体包含由SiC核和围绕该核的SiC混合晶体组成的SiC晶体或仅包含SiC混合晶体,以及具有结晶部分和非晶部分的粘合剂相。 SiC混合晶体还包含Al,O和/或N。

著录项

  • 公开/公告号DE10132505A1

    专利类型

  • 公开/公告日2003-01-30

    原文格式PDF

  • 申请/专利权人 WACKER-CHEMIE GMBH;

    申请/专利号DE2001132505

  • 发明设计人 SIGL LORENZ;LANGE DIETRICH;

    申请日2001-07-05

  • 分类号C04B35/569;G11B5/592;C04B35/577;

  • 国家 DE

  • 入库时间 2022-08-21 23:42:51

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