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Semiconductor memory device e.g. magnetoresistive random access memory has memory areas which are selectively controlled using each selection device during operating mode
Semiconductor memory device e.g. magnetoresistive random access memory has memory areas which are selectively controlled using each selection device during operating mode
The memory elements are provided in memory areas (2) to which selection devices (5,7) are assigned. The memory areas are selectively controlled using each selection device during operating mode.
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