Resistance arrangement for current measurement formed of n-doped zones on p-doped substrate

摘要

On a p-doped silicon substrate (1) an n-doped zone (3) forms the first part of resistance arrangement completed by second part (4). Their resistance value can be adjusted to a specific value by additional n-doping compared to the third n-doped region (2). Interconnections are formed by metal layers (7,8) and tracks (7a,9) terminations for connection to the evaluation circuit integrated with the shunt . Insulation barriers (5,6) isolate the zones from one another. Temperature compensation can be provided by the integration of a temperature sensor.